Advancing Semiconductor Metrology: Breaking Boundaries with TDM OCT

The landscape of advanced semiconductor manufacturing is shifting rapidly. With the rise of extreme heterogeneous integration and complex 2.5D/3D packaging, the demand for unprecedented precision in quality control and failure analysis has never been higher.

At Insidix, we are pushing the boundaries of what is possible in thermal warpage analysis with our Topography Deformation Measurement (TDM) OCT equipment.

Our Optical Coherence Tomography (OCT) module utilizes a high-frequency, point-based optical scanner that brings true nanometer-scale resolution directly to the engineering floor. By capturing measurements in real time while devices undergo mechanical and thermal stress, we ensure that the resulting topographical data is highly accurate, reliable, and actionable.

Here is a look at what makes TDM OCT a gamechanger for complex packaging and wafer measurements:

Key Capabilities of the TDM OCT System

·         Unmatched Precision: The system achieves an extraordinary 100nm axial resolution and 20µm lateral resolution, allowing engineers to detect even the most minute topographical deformations and coplanarity issues.

·         Extreme Thermal Profiling: Our thermal chambers are equipped with advanced convection and IR elements to accurately measure topography and warpage across a broad temperature range from -65°C to 400°C. With ramp rates, stability, and homogeneity that exceed industry standards, the system perfectly simulates real-world thermal stress.

·         Shadow-Free Imaging: By utilizing a coaxial measurement approach, the OCT module eliminates the shadow effects that often plague traditional optical inspection methods during deep-trench or high-density component analysis.

·         Surface Versatility: The system flawlessly measures challenging materials, reliably capturing high-fidelity data on mirror, transparent, and semi-transparent surfaces.

·         True Multiscale Analysis: Seamlessly combine the Phase-Shifting Projection Moiré principle (Fringe Projection) for large-area global mapping with the OCT sensor for targeted, ultra-high-resolution local inspection.

Preventing Failures Before Reflow

Whether we are analyzing 12" wafers, populated boards, or complex ASIC packages with High Bandwidth Memory (HBM), this technology provides the critical topographical data needed to truly understand structural deformation.

With TDM, engineering teams gain access to a comprehensive spectrum of analytical competencies. This includes high-resolution 2D and 3D imaging, detailed warpage graphs fully compliant with JEDEC and IPC standards, and comprehensive analyses such as CTE, strain, and vectorial plots. By catching these variations early, manufacturers can prevent the assembly of warped or out-of-spec parts long before reflow, protecting yield and ensuring long-term reliability.

As the complexity of advanced packaging continues to grow, having the right metrology is no longer just an advantage—it is a necessity.

If you are looking to overcome thermal warpage challenges and bring true nanometer-scale clarity to your processes, we are here to help.